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? semiconductor components industries, llc, 2016 july, 2016 ? rev. 3 1 publication order number: ncv8402d/d ncv8402d, ncv8402ad dual self-protected low-side driver with temperature and current limit ncv8402d/ad is a dual protected low?side smart discrete device. the protection features include over current, overtemperature, esd and integrated drain?to?gate clamping for overvoltage protection. this device offers protection and is suitable for harsh automotive environments. features ? short?cir cuit protection ? thermal shutdown with automatic restart ? overvoltage protection ? integrated clamp for inductive switching ? esd protection ? dv/dt robustness ? analog drive capability (logic level input) ? ncv prefix for automotive and other applications requiring unique site and control change requirements; aec?q100 qualified and ppap capable ? these devices are pb?free, halogen free/bfr free and are rohs compliant typical applications ? switch a variety of resistive, inductive and capacitive loads ? can replace electromechanical relays and discrete circuits ? automotive / industrial www. onsemi.com *max current limit value is dependent on input condition. so?8 case 751 style 11 marking diagram v (br)dss (clamped) r ds(on) typ i d max 42 v 165 m @ 10 v 2.0 a* xxxxxx = v8402d or 8402ad a = assembly location l = wafer lot y = year w = work week = pb?free package device package shipping ? ordering information ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. ncv8402ddr2g soic?8 (pb?free) 2500/tape & ree l 1 8 xxxxxx alyw 1 8 pin assignment 1 8 source 1 drain 1 gate 1 drain 1 source 2 drain 2 gate 2 drain 2 NCV8402ADDR2G drain source temperature limit gate input current limit current sense overvoltage protection esd protection
ncv8402d, ncv8402ad www. onsemi.com 2 maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit drain?to?source voltage internally clamped v dss 42 v drain?to?gate voltage internally clamped (r g = 1.0 m ) v dgr 42 v gate?to?source v oltage v gs 14 v continuous drain current i d internally limited power dissipation @ t a = 25 c (note 1) @ t a = 25 c (note 2) p d 0.8 1.62 w maximum continuous drain current @ t a = 25 c (note 1) @ t a = 25 c (note 2) i d 2.02 2.88 a thermal resistance junction?to?ambient steady state (note 1) junction?to?ambient steady state (note 2) r ja r ja 157 77 c/w single pulse drain?to?source avalanche energy (v dd = 32 v, v g = 5.0 v, i pk = 1.0 a, l = 300 mh, r g(ext) = 25 ) e as 150 mj load dump voltage (v gs = 0 and 10 v, r i = 2.0 , r l = 9.0 , t d = 400 ms) v ld 55 v operating junction and storage temperature t j , t stg ?55 to 150 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device function ality should not be assumed, damage may occur and reliability may be affected. 1. surface?mounted onto min pad fr4 pcb, (cu area = 40 sq. mm, 1 oz.). 2. surface?mounted onto 1 sq. fr4 board (cu area = 625 sq. mm, 2 oz.). drain source gate vds vgs i d i g + ? + ? figure 1. voltage and current convention
ncv8402d, ncv8402ad www. onsemi.com 3 electrical characteristics (t j = 25 c unless otherwise noted) parameter test condition symbol min typ max unit off characteristics drain?to?source breakdown voltage (note 3) v gs = 0 v, i d = 10 ma, t j = 25 c v (br)dss 42 46 55 v v gs = 0 v, i d = 10 ma, t j = 150 c (note 5) 40 45 55 zero gate voltage drain current v gs = 0 v, v ds = 32 v, t j = 25 c i dss 0.25 4.0 a v gs = 0 v, v ds = 32 v, t j = 150 c (note 5) 1.1 20 gate input current v ds = 0 v, v gs = 5.0 v i gssf 50 100 a on characteristics (note 3) gate threshold voltage v gs = v ds , i d = 150 a v gs(th) 1.3 1.8 2.2 v gate threshold temperature coefficient v gs(th) /t j 4.0 6.0 ?mv/ c static drain?to?source on?resistance v gs = 10 v, i d = 1.7 a, t j = 25 c r ds(on) 165 200 m v gs = 10 v, i d = 1.7 a, t j = 150 c (note 5) 305 400 v gs = 5.0 v, i d = 1.7 a, t j = 25 c 195 230 v gs = 5.0 v, i d = 1.7 a, t j = 150 c (note 5) 360 460 v gs = 5.0 v, i d = 0.5 a, t j = 25 c 190 230 v gs = 5.0 v, i d = 0.5 a, t j = 150 c (note 5) 350 460 source?drain forward on voltage v gs = 0 v, i s = 7.0 a v sd 1.0 v switching characteristics (note 5) turn?on delay time (10% v in to 90% i d ) v gs = 10 v, v dd = 12 v, i d = 2.5 a, r l = 4.7 td(on) 25 30 s turn?on rise time (10% i d to 90% i d ) t rise 120 200 s turn?off delay time (90% v in to 10% i d ) td(off) 20 25 s turn?off fall time (90% i d to 10% i d ) t fall 50 70 s slew?rate on (70% v ds to 50% v dd ) ?dv ds /dt on 0.8 1.2 v s slew?rate off (50% v ds to 70% v dd ) dv ds /dt off 0.3 0.5 self protection characteristics (t j = 25 c unless otherwise noted) (note 4) current limit v ds = 10 v, v gs = 5.0 v, t j = 25 c i lim 3.7 4.3 5.0 a v ds = 10 v, v gs = 5.0 v, t j = 150 c (note 5) 2.3 3.0 3.7 v ds = 10 v, v gs = 10 v, t j = 25 c 4.2 4.8 5.4 v ds = 10 v, v gs = 10 v, t j = 150 c (note 5) 2.7 3.6 4.5 temperature limit (turn?off) v gs = 5.0 v (note 5) t lim(off) 150 175 200 c thermal hysteresis v gs = 5.0 v t lim(on) 15 temperature limit (turn?off) v gs = 10 v (note 5) t lim(off) 150 165 185 thermal hysteresis v gs = 10 v t lim(on) 15 gate input characteristics (note 5) device on gate input current v gs = 5 v i d = 1.0 a i gon 50 a v gs = 10 v i d = 1.0 a 400 current limit gate input current v gs = 5 v, v ds = 10 v i gcl 0.05 ma v gs = 10 v, v ds = 10 v 0.4 thermal limit fault gate input current v gs = 5 v, v ds = 10 v i gtl 0.15 ma v gs = 10 v, v ds = 10 v 0.7 esd electrical characteristics (t j = 25 c unless otherwise noted) (note 5) electro?static discharge capability human body model (hbm) esd 4000 v machine model (mm) 400 3. pulse test: pulse width 300 s, duty cycle 2%.
ncv8402d, ncv8402ad www. onsemi.com 4 4. fault conditions are viewed as beyond the normal operating range of the part. 5. not subject to production testing.
ncv8402d, ncv8402ad www. onsemi.com 5 typical performance curves 1 10 10 100 figure 2. single pulse maximum switch?off current vs. load inductance l (mh) i l(max) (a) t jstart = 25 c t jstart = 150 c 10 100 1000 10 1 00 figure 3. single pulse maximum switching energy vs. load inductance l (mh) e max (mj) t jstart = 25 c t jstart = 150 c 0.1 1 10 110 figure 4. single pulse maximum inductive switch?off current vs. time in clamp time in clamp (ms) i l(max) (a) t jstart = 25 c t jstart = 150 c 10 100 1000 11 0 figure 5. single pulse maximum inductive switching energy vs. time in clamp time in clamp (ms) e max (mj) t jstart = 25 c t jstart = 150 c v ds (v) i d (a) figure 6. on?state output characteristics v gs = 2.5 v 3 v 4 v 5 v 6 v 8 v 10 v t a = 25 c 0 1 2 3 4 5 1234 5 v ds = 10 v 25 c 100 c 150 c ?40 c i d (a) v gs (v) figure 7. transfer characteristics 0 1 2 3 4 5 6 7 8 012345 3.5 v
ncv8402d, ncv8402ad www. onsemi.com 6 typical performance curves 0 100 200 300 400 45678910 figure 8. r ds(on) vs. gate?source voltage v gs (v) r ds(on) (m ) 150 c, i d = 0.5 a 150 c, i d = 1.7 a 100 c, i d = 0.5 a 100 c, i d = 1.7 a 25 c, i d = 0.5 a 25 c, i d = 1.7 a ?40 c, i d = 0.5 a ?40 c, i d = 1.7 a 50 100 150 200 250 300 350 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 150 c, v gs = 10 v 150 c, v gs = 5 v 100 c, v gs = 5 v 100 c, v gs = 10 v 25 c, v gs = 5 v 25 c, v gs = 10 v ?40 c, v gs = 5 v ?40 c, v gs = 10 v figure 9. r ds(on) vs. drain current i d (a) r ds(on) (m ) 0.5 0.75 1 1.25 1.5 1.75 2 ?40 ?20 0 20 40 60 80 100 120 140 v gs = 5 v v gs = 10 v i d = 1.7 a figure 10. normalized r ds(on) vs. temperature t ( c) r ds(on) (normalized) 2 3 4 5 6 7 8 5678910 25 c 100 c 150 c ?40 c figure 11. current limit vs. gate?source voltage v gs (v) i lim (a) v ds = 10 v 2 3 4 5 6 7 8 ?40 ?20 0 20 40 60 80 100 120 140 figure 12. current limit vs. junction temperature t j ( c) i lim (a) v ds = 10 v v gs = 5 v v gs = 10 v 0.0001 0.001 0.01 0.1 1 10 10 15 20 25 30 35 40 figure 13. drain?to?source leakage current v ds (v) i dss ( a) v gs = 0 v 25 c 100 c 150 c ?40 c
ncv8402d, ncv8402ad www. onsemi.com 7 typical performance curves 0.6 0.7 0.8 0.9 1 1.1 1.2 ?40 ?20 0 20 40 60 80 100 120 140 figure 14. normalized threshold voltage vs. temperature t ( c) normalized v gs(th) (v) i d = 150 a v gs = v ds 0.5 0.6 0.7 0.8 0.9 1 1.1 1234567891 0 figure 15. source?drain diode forward characteristics i s (a) v sd (v) 25 c 100 c 150 c ?40 c v gs = 0 v 0 50 100 150 200 345678910 t d(off) t d(on) t f t r figure 16. resistive load switching time vs. gate?source voltage v gs (v) time ( s) i d = 2.5 a v dd = 12 v r g = 0 0 0.2 0.4 0.6 0.8 1 34567891 0 figure 17. resistive load switching drain?source voltage slope vs. gate?source voltage v gs (v) drain?source voltage slope (v/ s) i d = 2.5 a v dd = 12 v r g = 0 ?dv ds /d t(on) dv ds /d t(off) 0 25 50 75 100 0 400 800 1200 1600 2000 time ( s) figure 18. resistive load switching time vs. gate resistance r g ( ) t f , (v gs = 10 v) t f , (v gs = 5 v) t d(off) , (v gs = 10 v) t r , (v gs = 5 v) t d(off) , (v gs = 5 v) t r , (v gs = 10 v) t d(on) , (v gs = 5 v) t d(on) , (v gs = 10 v) i d = 2.5 a v dd = 12 v 0 0.2 0.4 0.6 0.8 1 0 500 1000 1500 200 0 dv ds /d t(off) , v gs = 5 v ?dv ds /d t(on) , v gs = 10 v ?dv ds /d t(on) , v gs = 5 v dv ds /d t(off) , v gs = 10 v figure 19. drain?source voltage slope during turn on and turn off vs. gate resistance r g ( ) drain?source voltage slope (v/ s) i d = 2.5 a v dd = 12 v
ncv8402d, ncv8402ad www. onsemi.com 8 typical performance curves figure 20. transient thermal resistance pulse width (sec) 0.01 0.001 0.0001 0.00001 0.000001 0.01 0.1 1 10 1000 r(t) ( c/w) 0.1 1 10 100 1000 10% duty cycle = 50% 20% 5% 2% 1% single pulse 100 0.0000001
ncv8402d, ncv8402ad www. onsemi.com 9 test circuits and waveforms dut g d s rl vdd ids vin figure 21. resistive load switching test circuit rg + ? td(on) tr vin ids td(off) tf 10% 10% 90% 90% figure 22. resistive load switching waveforms
ncv8402d, ncv8402ad www. onsemi.com 10 test circuits and waveforms vdd ids vin l vds tp figure 23. inductive load switching test circuit dut g d s rg + ? 0 v 5 v t av vin ids vds t p v ds(on) i pk 0 vdd v (br)dss figure 24. inductive load switching waveforms
ncv8402d, ncv8402ad www. onsemi.com 11 package dimensions soic?8 case 751?07 issue ak seating plane 1 4 5 8 n j x 45 k notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 3. dimension a and b do not include mold protrusion. 4. maximum mold protrusion 0.15 (0.006) per side. 5. dimension d does not include dambar protrusion. allowable dambar protrusion shall be 0.127 (0.005) total in excess of the d dimension at maximum material condition. 6. 751?01 thru 751?06 are obsolete. new standard is 751?07. a b s d h c 0.10 (0.004) dim a min max min max inches 4.80 5.00 0.189 0.197 millimeters b 3.80 4.00 0.150 0.157 c 1.35 1.75 0.053 0.069 d 0.33 0.51 0.013 0.020 g 1.27 bsc 0.050 bsc h 0.10 0.25 0.004 0.010 j 0.19 0.25 0.007 0.010 k 0.40 1.27 0.016 0.050 m 0 8 0 8 n 0.25 0.50 0.010 0.020 s 5.80 6.20 0.228 0.244 ?x? ?y? g m y m 0.25 (0.010) ?z? y m 0.25 (0.010) z s x s m 1.52 0.060 7.0 0.275 0.6 0.024 1.270 0.050 4.0 0.155 mm inches scale 6:1 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* style 11: pin 1. source 1 2. gate 1 3. source 2 4. gate 2 5. drain 2 6. drain 2 7. drain 1 8. drain 1 on semiconductor and the are registered trademarks of semiconductor components industries, llc (scillc) or its subsidia ries in the united states and/or other countries. scillc owns the rights to a number of pa tents, trademarks, copyrights, trade secret s, and other intellectual property. a listin g of scillc?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any product s herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any part icular purpose, nor does sci llc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typi cal? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating param eters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgic al implant into the body, or other applications intended to s upport or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer s hall indemnify and hold scillc and its officers , employees, subsidiaries, affiliates, and dist ributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufac ture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 ncv8402d/d literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative

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